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| SMD Type Silicon NPN Epitaxial 2SC2776 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 20 4 30 100 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Collector output capacitance Gain bandwidth product Noise figure Symbol Testconditons Min 30 20 4 0.5 35 0.8 1.1 320 5.5 200 1.2 V pF MHz dB Typ Max Unit V V V iA V(BR)CBO IC = 10iA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10iA , IC = 0 ICBO hFE VCB = 10V, IC = 0 VCE = 6 V, IC = 1 mA VCE(sat) IC = 10 mA, IB = 1 mA Cob fT NF VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 1 MA VCE = 6 V, IC = 1 mA, f = 100 MHz, Rg = 50 U VCE = 6 V, IC = 1 mA, f = 100 MHz, Rg = 100U, RL = 550U Power gain PG 17 +0.1 0.38-0.1 0-0.1 dB hFE Classification Marking Rank hFE VA A 35 70 VB B 60 120 VC C 100 200 www.kexin.com.cn 1 |
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